国家/地区 美国（27） 韩国（25） 中国（5） 欧洲专利局（EPO）（4） 世界知识产权组织（4）
IPC部 H（28） C（7） B（5）
G（3） F（2）
IPC大类 H01（28） C01（6） B32（2）
B82（2） C23（2） F21（2）
G01（2）
IPC小类 H01L（24） C01B（6） H01J（4）
H01B（3） H01M（3） B32B（2）
B82Y（2） C23C（2） F21K（2）
G01N（2）
IPC H01L029/16（16） H01L029/78（11） H01L029/66（10）
H01L021/336（7） H01L029/06（6） H01L021/02（5）
H01L029/778（5） H01L029/786（5） H01J001/304（4）
C01B031/04（3） H01B001/04（3） H01J001/30（3）
H01J009/02（3） H01L021/768（3） H01L029/267（3）
发明人 LEE J（9） PARK S（9） LEE J H（8）
LEE C（7） SHIN H（7） SHIN H J（6）
LEE C S（5） LEE D（5） PARK S J（5）
HEO J（3） KIM H（3） KIM Y（3）
KIM Y C（3） LEE D G（3） LEE M（3）
公开年 2015（29）
申请年 2014（18）  2015（8）  2013（3） 
专利权人 SAMSUNG ELECTRONICS CO LTD（29）

Composite used as electrochemically active material for forming electrode of lithium battery, field-emission device, biosensor, semiconductor device and thermoelectric device, comprises silicon dioxide in graphene matrix.

SON I, PARK J, CHANG J, KU J, LI X, CHOI J, SON I H, PARK J H, CHANG J J, KU J H, LI X S, CHOI J M

Semiconductor device, has first gate insulating layer comprising first ion gel, channel layer comprising graphene, and second gate insulating layer comprising second ion gel, which is different from first ion gel.

KIM U, SHIM Y, PARK Y, LEE C, HWANG S, KIM U J, SHIM Y S, PARK Y S, LEE C W, HWANG S W

Graphene-metal bonding structure for semiconductor device has intermediate material layer which forms edge-contact with metal layer from boundary portions of material contained in intermediate material layer that contacts metal layer.

LEE J, SHIN H, LEE M, LEE C, LEE J H, SHIN H J, LEE M H, LEE C S, LI M

Electron-emissive element, has graphene emitter adhered on emitter supporting unit and metal mesh, insulating layer provided with gate electrode, and gate supporting unit supported with graphene gate.

PARK S, LEE D, KIM I, SUNG J, LEE C, KANG D, YU E, PARK S H, LEE D G, KIM I H, SUNG J K, LEE C S, KANG D S, YU E A

Electronic device such as optical device, has graphene layer that includes multiple nanocrystal graphenes and multiple graphene protrusions and graphene layer is covered by semiconductor layer.

SHIN H, KIM S, LEE K, PARK H, CHO E, CHO E B, KIM S W, LEE K H, PARK H J, SHIN H J

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Method for fabricating field effect transistor, involves filling slit with potential barrier material is provided to induce Fowler-Nordheim tunneling through graphene channel layer when gate voltage is applied to gate electrode.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J

Semiconductor light emitting device for backlight unit of display device, has light emitting nanostructures which are disposed on openings of graphene layer of mask layer.

HWANG S W, KIM J W, AHN I H, CHOI S J

Graphene transistor having tunable barrier has gate insulating layer that covers portion of graphene layer, gate electrode on gate insulating layer, such that energy barrier is between semiconductor substrate and graphene layer.

PARK J, SHIM J, PARK H, LEE J, LEE J H, PARK H Y, PARK J H, SHIM J W

Method of forming multilayer graphene structure for use in e.g. nanoelectronics, involves growing graphene layer on growth substrate by removal of portion of sacrificial layer.

SUH H, JEON I, SONG Y J, WU Q, JUNG S, JEON I S, JUNG S J, SUH H S, SONG Y